savantic semiconductor product specification silicon npn power transistors 2SD1830 description with to-220f package complement to type 2sb1228 high dc current gain. large current capacity and wide aso. low saturation voltage. darlington applications suitable for use in control of motor drivers, printer hammer drivers,relay drivers,and constant-voltage regulators. pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 110 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 6 v i c collector current 8 a i cm collector current-peak 12 a t c =25 20 p c collector dissipation 2 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD1830 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c =5ma; i e =0 110 v v (br)ceo collector-emitter breakdown voltage i c =50ma; r be = > 100 v v cesat collector-emitter saturation voltage i c =4a ; i b =8ma 0.9 1.5 v v besat base-emitter saturation voltage i c =4a ; i b =8ma 2.0 v i cbo collector cut-off current v cb =80v;i e =0 0.1 ma i ebo emitter cut-off current v eb =5v;i c =0 3.0 ma h fe dc current gain i c =4a ; v ce =3v 1500 4000 f t transition frequency i c =4a ; v ce =5v 20 mhz switching times t on turn-on time 0.6 s t stg storage time 4.8 s t f fall time i c =500i b1 =-500i b2 =4a v cc =50v ,r l =12.5 d 1.6 s
savantic semiconductor product specification 3 silicon npn power transistors 2SD1830 package outline fig.2 outline dimensions
|